Memristors combine ferroelectrics and graphene for neuromorphic chips – eeNews Europe

To create memristors, switches with a memory of past events, strontium titanium oxide (STO) is often used. This material is a perovskite, whose crystal structure depends on temperature, and can become an incipient ferroelectric at low temperatures. However the ferroelectric behaviour is lost above 105 Kelvin, and the domains and domain walls that accompany these phase transitions are the subject of active research.
It is in a league of its own, says Tamalika Banerjee, Professor of Spintronics of…

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